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|Silicon Nitride LPCVD Tube |
Operating procedures are available.
Low pressure chemical vapor deposition (PECVD) is performed
in a vacuum environment at higher substrate temperatures
such as 600 - 820°C. This process is based on the chemical
reaction of gaseous compounds to form a thin film
deposition. Thermal energy source is the primary driving
force for the reaction while the lower pressures reduces gas
phase nucleation. Together these system parameters achieve
reasonable deposition uniformity and allow control of the
The LPCVD nitride system is located in the middle right-hand
tube of the Thermco furnace. The system uses a Tymkon
microprocessor sequencer to automatically control all vacuum
valves, gas flow, and pressure control. The tube temperature
is manually adjusted on the temperature controls located on
the side of the system. Wafers are loaded and pushed into
the tube manually.
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Date last modified:
Date created: 25-Jul-2001
Copyright 2007 The Board of Regents of the University of Wisconsin System