University of Wisconsin-Madison Wisconsin Center for Applied Microelectronics College of Engineering University of Wisconsin-Madison Wisconsin Center for Applied Microelectronics
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Current Equipment Status

Equipment at WCAM    (Click on a TOOL NAME for an overview of the tool)
    
Process key:       MOS Silicon        Polymers            Compound Semi        MEMS     

ANALYSIS AND METROLOGY
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Filmetrics
F-20 Optical Reflectometer
Gilles Noncontact film thickness measurement for polymers, some dielectrics, and thin metals

     Procedure      Theory      Results
       
Optical microscopes
(various models)
Leonard Optical inspection

     Procedure      Web resource
       
Nikon LV100 imaging station: optical microscope with camera & PC Leonard High-magnification imaging; digital image capture; advanced image manipulation tools.

     Procedure      Software manual

     Web resource
       
Wilde 420 imaging station: optical microscope with camera and PC Leonard Low-mag, wide-field imaging; variable zoom; digital image capture; advanced image manipulation tools.

     Procedure      Software manual

     Web resource
       
Nikon Eclipse imaging station: optical microscope with camera & PC, in the Teaching Bay Leonard High-magnification imaging; digital image capture; advanced image manipulation tools.

     Procedure      Web resource
       
Superior AFPP 300upg Four-Point Probe Lu Measurement of sheet resistance on a surface. Range: 0.001 to 1000 ohm-cm

     Procedure      Theory     Reference
       
Tencor AlphaStep 200
Surface Profilometer (2 units)
Gilles Step height measurement via stylus contact;
5 Angstrom resolution possible

     Procedure      Training video
       
Tencor FLX-2320
Film Stress Measurement
Gilles Computes stress in deposited films by measuring deformation of the substrate

     Procedure      Theory
       
Signatone S-1170-8N6 Probe Station Gilles          

Process key:       MOS Silicon        Polymers            Compound Semi        MEMS     

ASSEMBLY AND PACKAGING
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Indium Evaporator Gilles Deposition of indium by thermal evaporation onto substrates in vacuum

     Procedure      Theory
       
K&S 4124
Gold Ball Bonder
(wire bonder)
Kupcho Makes electrical connections by ultrasonically bonding Au wire. Heated holders for several package types; manual and semiautomatic operation modes.

     Procedure      Reference      Results
       
Karl Suss RA-120
Wafer Scriber
Gilles Programmable diamond-tipped scriber; aids breaking samples up to 100 mm into smaller dies

     Procedure
       
MEI-720
Die Attacher
Kupcho Attaches IC dies to packaging using a film of eutectic alloy. Temps up to 500 C.

     Procedure
       
MicroAutomation 1006
Dicing Saws (2 units)
Gilles Programmable high-speed blade cuts substrates into dies. Blades available for silicon, glass, quartz, and gallium arsenide.

     Procedure      Reference     
       
WestBond 747677
Aluminum Wedge Bonder
(wire bonder)
Kupcho Makes electrical connections by ultrasonically bonding 75-micron Al wire. Manual operation.

     Procedure      Training Video

     Reference
       
Package Annealer Kupcho          

Process key:       MOS Silicon        Polymers            Compound Semi        MEMS     

DEPOSITION
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Denton
Discovery 24
RF/DC Sputterer
Gilles Deposition of metals and dielectrics by RF and DC sputtering, onto substrates in vacuum. Four independent cathodes allow cosputtering or alternation of layers. Substrates can be heated.

     Schedule time on the Denton      Web resource

     Procedure      Materials Available      Reference
       
CVC 601
DC Sputterer

Gilles Deposition of metal by magnetron sputtering, onto many samples at once, in vacuum.

     Schedule time on the CVC      Training Video

     Procedure      Materials Available      Reference
       
CHA-600
E-beam Evaporator
("metal evaporator")
Gilles Deposition of metal by e-beam evaporation, onto substrates in vacuum. Real-time film thickness monitoring.

     Schedule time on the CHA      Training video

     Procedure      Materials Available      Reference
       
Angstrom
E-beam Evaporator
Gilles Deposition of metal by e-beam evaporation, onto substrates in vacuum. Real-time film thickness monitoring; rotation sample mount dome; substrate heater.

     Procedure      Materials Available      Reference
       
Telemark
E-beam Evaporator
("dielectric evaporator")
Gilles Deposition of dielectric materials by e-beam evaporation, onto substrates in vacuum. Real-time film thickness monitoring.

     Schedule time on the Telemark

     Procedure      Materials Available      Reference
       
PlasmaTherm
PT70 PECVD chamber
Kupcho Deposition of SiN or SiO2 onto hot substrates, by plasma-enhanced chemical vapor deposition

     Operating Procedure
       
Indium Evaporator Gilles Deposition of indium by thermal evaporation onto substrates in vacuum

     Procedure      Theory
       

Process key:       MOS Silicon        Polymers            Compound Semi        MEMS     

DRY ETCH
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ALL PLASMA ETCH TOOLS Kupcho
General index to etch parameters of all available recipes.

Etch gases available at WCAM.

       
XeF2
Xenon difluoride isotropic silicon etcher
Kupcho Reactive ion xenon difluoride (XeF2) etcher. Can perform high-selectivity, isotropic etches resulting in long undercuts, for example to release MEMS structures, in Si, Mo, Ge, Nb, polysilicon, Ti, and W.

     Procedure      Etch gases      Reference
       
STS
Mulitplex Deep Silicon RIE
Kupcho Reactive ion etcher. Plasma is inductively coupled, low density, and low pressure. Ion energies are low. Tool can alternate cycles of etching and passivation. Result is good anisotropy in very deep (25o microns or greater) Si etch trenches.

     Schedule time on the STS

     Procedure      Etch gases      Reference
       
Unaxis 790 RIE Kupcho Selective removal of material by reactive ion etching. Photoresist is allowed as a mask in this tool.

     Procedure      Etch gases      Reference

     Training Video
       
PT790-2 ICP
PlasmaTherm 790 ICP/RIE Etcher
Kupcho General-use ICP/RIE etch system. Independent control of plasma density using the ICP power (max 1000W) and substrate bias using the RIE power (max 500W). Can be used to etch materials selectively and faster than a simple RIE system.

     Procedure      Etch gases      Reference
       
PlasmaTherm PT70
Reactive-Ion Etcher
Kupcho Selective removal of material by RF plasma.

     Procedure      Etch gases

     Reference      Web resource
       
PlasmaTherm 770 ECR
III-V Semiconductor Etcher
Kupcho Selective removal of material by electron cyclotron resonance (ECR) enhanced plasma RIE. Primarily intended for etching semiconductor materials.

     Procedure      Etch gases      Reference

    Training Video
       
PlasmaTherm 770 ICP
Metal Etcher
Kupcho Selective removal of material by inductively-coupled plasma (ICP) RIE. Primarily intended for etching metals.

     Procedure      Etch gases      Reference

     Training Video
       
Samco
UV-Ozone Stripper/Cleaner
Leonard Cleans and strips organic material from substrates, and modifies surface energy, in preparation for later processing steps

     Procedure      Etch gases      Reference X
       
YES
O2 Plasma Asher & Stripper
Kupcho Cleans and strips organic material from substrates, and modifies surface energy, in preparation for later processing steps

     Procedure      Etch gases      Reference
       
Trion Phantom III
high-density plasma RIE
Leonard High density inductively-coupled plasma RIE. Accepts 100 mm wafers on electrostatic chuck.

     Procedure      Etch gases      Reference
       

Process key:       MOS Silicon        Polymers            Compound Semi        MEMS     

MICROMACHINING
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Blue M
Programmable Polymer Oven
Kupcho Convection oven with nitrogen flow. Programmable temperature profiles. Temp to 425 C.

     Procedure
       
Cooke
Anneal Oven
Kupcho Nitrogen/vacuum polyimide film anneal. Temp to 300 C.

     Procedure
       
Tousimis
Automegasamdri 915B Critical Point Dryer
Leonard Dries samples without surface tension distortions, by replacing liquid on sample with liquid CO2, then passing through CO2's supercritical region to change it from liquid to gas without crossing a phase boundary.

     Procedure
       
EV 801
Wafer Bonder
Lu Wafer-to-wafer anodid bonding for MEMS fabrication. 2", 3", or 4" wafers. Temp to 550 C; force to 7,000 N; voltage to 1,200 V. Includes cleaning station.

     Procedure
       
EV 620
Aligner for EV 801 Bonder
Lu Back side alignment system for EV 801 bonder. Resolution to 2 microns.

     Procedure
       

Process key:       MOS Silicon        Polymers            Compound Semi        MEMS     

LITHOGRAPHY
TOOL
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     Lithography Reference Material

       
Nikon Body 8 I-line Stepper Milicic  

     Procedure
       
Canon
PLA-501 Contact Aligner, 3" wafers;
Teaching Tool
Milicic Mask aligner & UV exposure tool. Automated handling of 3" wafers. Manual alignment. 4" masks. Used by UW microfabrication classes.

     Procedure
       
Karl Suss MA6/BA6
Contact Aligner / IR Back Side Aligner
Leonard Manually-operated mask aligner and exposure tool. Substrates: 3", 4", or 6" wafers; pieces of wafers possible. Masks: 4", 5", or 7". Alignment to top or bottom face of substrate. Exposure modes: Proximity; soft, hard, or vacuum contact. 350 W UV source. Submicron resolution possible.

     Procedure      Training video
       
Karl Suss Old MJB3
Contact Aligner
Leonard Manual mask aligner and exposure tool.

     Procedure
       
Karl Suss New MJB3
Contact Aligner / IR Back Side Aligner
Leonard Manual mask aligner and exposure tool.

     Procedure
       
Obducat
AB NIL Nanoimprinter
Lu Manually loaded imprint tool. Heat and pressure programmable to 250 C, 1000 PSI. Substrates up to 65 mm diameter. No alignment. Possible 10 nm resolution.

     Procedure
       
Solitec VBS200 HMDS Prime Oven Leonard        Procedure        
Headway
Programmable Photoresist Spinners #1 and #3 - General Use
Leonard Chemical benches with wafer spinners and vacuum hotplates, for coating and baking substrates with non-epoxy photoresists (e.g., SC1827). Preprogrammed spin speed recipes.

     Procedure
       
Headway
Programmable Photoresist Spinner #2 - SU8
Leonard Chemical bench with wafer spinner and vacuum hotplate, dedicated for coating and baking substrates epoxy photoresists such as SU8. Preprogrammed spin speed recipes.

     Procedure
       
HTG UV Flood Exposure Bed Leonard UV light table for flood exposure of samples.

     Operating procedure is posted at the tool.
       
Solvent Bench
Leonard General-use flow hood for solvents. Includes heated PR stripping tanks for cleaning wafers and masks. Do liftoff here.

     Procedure
       
SU8 Solvent Bench
Leonard Flow hood for SU8 photoresist processing. Includes two programmable hotplates.

     Procedure      Hotplate Programming
       
Spin-Rinse Dryer Leonard Touchless drying of 4" wafers

       
Lithography Ovens Ovens for baking many lithography wafers at once.

       

Process key:       MOS Silicon        Polymers            Compound Semi        MEMS     

TEACHING LAB
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Canon
PLA-501 Contact Aligner, 3" wafers;
Teaching Tool
Milicic Mask aligner & UV exposure tool. Automated handling of 3" wafers. Manual alignment. 4" masks. Used by UW microfabrication classes.

     Procedure
       
Corrosives Bench
Chemical bench for teaching
Milicic Flow hood for handling corrosive substances, including acids and bases. No solvents are permitted at this bench. Two hotplates, three DI sinks, DI sprayer, N2 blowoff guns, and solution aspirator.

     Procedure
       
Solvent Bench
Chemical bench for teaching
Milicic Flow hood for handling solvents, including acetone and alcohol. No corrosives are permitted at this bench. Two hotplates, DI sink, DI sprayer, and N2 blowoff gun. Users may request permission to heat solvents at this bench.

     Procedure
       
Spin Coat Bench
Photoresist spincoater for teaching
Milicic Chemical bench with hotplate and manually-controlled wafer spinner.

     Procedure
       
Black Max Oxidation
Wet/Dry Oxidation Furnace for teaching
Milicic Furnace tube with microprocessor-controlled temperature profiles and gas flows. Recipes available for wet or dry oxidation, nitrogen anneal. Wafer diameter to 4".

     Procedure
       
Black Max Annealer
Forming Gas Metal Anneal Furnace
Milicic Furnace tube with microprocessor-controlled temperature profiles and gas flows. Recipes available for nitrogen or forming gass anneal. Wafer diameter to 4". Some metals are permitted in this furnace.

     Procedure
       
Spin-Rinse Dryer   Touchless drying of 4" wafers

       

Process key:       MOS Silicon        Polymers            Compound Semi        MEMS     

THERMAL PROCESSING
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Black Max Annealer
Forming Gas Metal Anneal Furnace
Milicic Furnace tube with microprocessor-controlled temperature profiles and gas flows. Recipes available for nitrogen or forming gass anneal. Wafer diameter to 4". Some metals are permitted in this furnace.

     Procedure
       
Black Max Oxidation
Wet/Dry Oxidation Furnace for teaching
Milicic Furnace tube with microprocessor-controlled temperature profiles and gas flows. Recipes available for wet or dry oxidation, nitrogen anneal. Wafer diameter to 4".

     Procedure
       
Heatpulse 610 RTA
Rapid Thermal Annealer
Gilles Programmable heating rates of 1 to 200 C per second, up to 800 C, for 4" samples in nitrogen or forming gas.

     Procedure      Training video
       
TYSTAR LTO
Low-Temperature Oxide Furnace
Gilles Dry-oxide LPCVD at 450 C in O2 and SiH4; PH3 may be added as dopant.

     Procedure
       
TYSTAR Poly
Polysilicon LPCVD Furnace
Gilles Polysilicon LPCVD in SiH4; PH3 may be added as dopant.

     Procedure
       
TYSTAR Nitride
Silicon Nitride LPCVD Furnace
Gilles SiNx LPCVD in dichlorosilane (H2SiCl2) and ammonia (NH3).

     Procedure
       
TYSTAR Oxide
Wet/Dry Oxidation Furnace
Kupcho Wet or dry oxidation, or annealing, at a range of temperatures.

     Procedure
       
MRL High Temperature Anneal
Furnace Tube 1
Kupcho Annealling in forming gas or nitrogen, 600 to 1050 C.)

     Procedure
       
MRL Oxidation
General-Use Steam Oxidation Furnace Tube 2
Kupcho Wet or dry oxidation, 600 to 1050 C. Also annealing.

     Procedure
       
MRL Compound Semi Oxidation
Furnace Tube 3
Kupcho Wet or dry oxidation, 380 to 500 C. Also annealing. Reserved for compound semiconductors.

     Procedure
       
MRL Low-Temperature Anneal
Furnace Tube 4
Kupcho Annealing at 380 to 500 C, in nitrogen or forming gas.

     Procedure
       
MRL high-Temperature Anneal
Furnace Tube 6
Kupcho Annealing at 600 to 1200 C, in nitrogen or forming gas.

     Procedure
       
Blue M
Programmable Polymer Oven
Kupcho Convection oven with nitrogen flow. Programmable temperature profiles. Temp to 425 C.

     Procedure
       
Cooke
Anneal Oven
Kupcho Nitrogen/vacuum polyimide film anneal. Temp to 300 C.

     Procedure
       
Prefurnace Clean Kupcho Flow hood and chemical bench for preparing substrates before thermal processing, for example in the LPCVD or oxidation furnaces. Four process tanks: Piranha bath; ammonia / hydrogen peroxide; hydrochloric acid / hydrogen peroxide; and hydrofluoric acid. Sample holders for 3", 4", and 6" wafers, and pieces/parts. Quick-dump DI rinse (QDR) tanks to rinse samples between process tanks. Two process tanks and one QDR have megasonics. Glove rinse and bottle washer. Spin-rinse dryer (SRD).

     Procedure      Training video
       
Spin-Rinse Dryer   Touchless drying of 3" or 4" wafers, after prefurnace clean

       

Process key:       MOS Silicon        Polymers            Compound Semi        MEMS     

     Reference
WET CHEMISTRY
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Aluminum Etchant
Chemical Bench ("DAE Bench")
Leonard Wet aluminum etch at 40 C, in commercial Defreckling Aluminum Etchant (DAE) solution. Bench also has a quick-dump rinser (QDR), hotplate, and sink. Wafer and piece holders provided.

     Procedure
       
BOE Etch Bench
Buffered Oxide Etch Chemical Bench
Leonard Process tanks with filtered 6:1 and 15:1 BOE solutions; cascade rinse tank; sink; wafer and piece holders.

     Procedure
       
III-V Semiconductor Chemical Bench Leonard Acid and base chemical processing, in beakers in hotplate wells. Two hotplates; two sinks; deionized water sprayer; solution aspirator; timers.

     Procedure
       
KOH/TMAH Silicon Wet Etch Bench Leonard Separate tanks for etching Si in hot KOH or TMAH at 80 C; cascade rinser; control timer.

     Procedure      Reference
       
Nitride Wet Strip
Chemical Bench
Leonard Phosphoric acid process tank at 170 C for stripping silicon nitride; quick-dump rinser (QDR); wafer and piece holder.

     Procedure
       
Piranha Bench Leonard Heathed process tank for removing organic material from substrates in Piranha (sulfuric acid and hydrogen peroxide0 solution; quick-dump rinser (QDR); hotplate; sink; timer.

     Procedure
       
Solvent Benches Leonard Two hotplates; ultrasonic tank; quick-dump rinser (QDR); sink; timers. This is a good place to do liftoff.

     Procedure
       
Non-Litho Spinner Leonard Substrate spinner with manual speed and time controls. For applications other than lithography.

     Procedure
       
Spin-Rinse Dryer (SRD) Touchless rinsing and drying of 3" and 4" wafers.

     Procedure
       

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Copyright 2011 The Board of Regents of the University of Wisconsin System
Date last modified: 21-Dec-2011
Date created: 03-Feb-2003
Content by: Quinn Leonard
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