Copyright 2011 The Board of Regents of the University of Wisconsin System
Date last modified: 21-Dec-2011
Date created: 03-Feb-2003
Content by: Quinn Leonard
Accessibility
Web services
| Equipment at WCAM (Click on a TOOL NAME for an overview of the tool) | ||||||||
| Process key: | MOS Silicon | Polymers | Compound Semi | MEMS | ||||
| ANALYSIS AND METROLOGY | ||||||
|---|---|---|---|---|---|---|
| TOOL | STAFF CONTACT | CAPABILITIES & RESOURCES | M O S |
P O L Y |
S E M I |
M E M S |
|
Filmetrics F-20 Optical Reflectometer |
Gilles | Noncontact film thickness measurement for polymers, some dielectrics, and thin metals Procedure Theory Results |
||||
|
Optical microscopes (various models) |
Leonard | Optical inspection Procedure Web resource |
||||
| Nikon LV100 imaging station: optical microscope with camera & PC | Leonard | High-magnification imaging; digital image capture; advanced image manipulation tools. Procedure Software manual Web resource Results |
||||
| Wilde 420 imaging station: optical microscope with camera and PC | Leonard |
Low-mag, wide-field imaging; variable zoom; digital image capture; advanced image manipulation tools. Procedure Software manual Web resource Results |
||||
| Superior AFPP 300upg Four-Point Probe | Milicic | Measurement of sheet resistance on a surface. Range: 0.001 to 1000 ohm-cm Procedure Theory Reference Results |
||||
|
Tencor AlphaStep 200 Surface Profilometer (2 units) |
Gilles | Step height measurement via stylus contact; 5 Angstrom resolution possible Procedure Training video Results |
||||
|
Tencor FLX-2320 Film Stress Measurement |
Gilles | Computes stress in deposited films by measuring deformation of the substrate Procedure Theory Results |
||||
| Signatone S-1170-8N6 Probe Station | Gilles | |||||
| Process key: | MOS Silicon | Polymers | Compound Semi | MEMS |
| ASSEMBLY AND PACKAGING | ||||||
|---|---|---|---|---|---|---|
| TOOL | STAFF CONTACT | CAPABILITIES & RESOURCES | M O S |
P O L Y |
S E M I |
M E M S |
Indium Evaporator | Gilles | Deposition of indium by thermal evaporation onto substrates in vacuum Procedure Reference |
|
K&S 4124 Gold Ball Bonder (wire bonder) |
Kupcho | Makes electrical connections by ultrasonically bonding Au wire. Heated holders for several package types; manual and semiautomatic operation modes. Procedure Reference Results |
||||
|
Karl Suss RA-120 Wafer Scribe |
Gilles | Programmable diamond-tipped scriber; aids breaking samples up to 100 mm into smaller dies Procedure |
||||
|
MEI-720 Die Attacher |
Kupcho | Attaches IC dies to packaging using a film of eutectic alloy. Temps up to 500 C.
Procedure |
||||
|
MicroAutomation 1006 Dicing Saws (2 units) |
Gilles | Programmable high-speed blade cuts substrates into dies. Blades available for silicon, glass, quartz, and gallium arsenide.
Procedure |
||||
|
WestBond 747677 Aluminum Wedge Bonder (wire bonder) |
Kupcho | Makes electrical connections by ultrasonically bonding 75-micron Al wire. Manual operation.
Procedure Training Video Reference Results |
Package Annealer | Kupcho | ||
| Process key: | MOS Silicon | Polymers | Compound Semi | MEMS |
| DEPOSITION | ||||||
|---|---|---|---|---|---|---|
| TOOL | STAFF CONTACT | CAPABILITIES & RESOURCES | M O S |
P O L Y |
S E M I |
M E M S |
Denton Discovery 24 RF/DC Sputterer |
Gilles | Deposition of metals and dielectrics by RF and DC sputtering, onto substrates in vacuum. Four independent cathodes allow cosputtering or alternation of layers. Substrates can be heated. Schedule time on the Denton Web resource Procedure Materials Available Reference |
|
CVC 601 DC Sputterer |
Gilles | Deposition of metal by magnetron sputtering, onto many samples at once, in vacuum. Schedule time on the CVC Training Video Procedure Materials Available Reference |
CHA-600 E-beam Evaporator ("metal evaporator") |
Gilles | Deposition of metal by e-beam evaporation, onto substrates in vacuum. Real-time film thickness monitoring. Schedule time on the CHA Training video Procedure Materials Available Reference |
Angstrom E-beam Evaporator |
Gilles | Deposition of metal by e-beam evaporation, onto substrates in vacuum. Real-time film thickness monitoring; rotation sample mount dome; substrate heater. Procedure Materials Available Reference |
Telemark E-beam Evaporator ("dielectric evaporator") |
Gilles | Deposition of dielectric materials by e-beam evaporation, onto substrates in vacuum. Real-time film thickness monitoring. Schedule time on the Telemark Procedure Materials Available Reference |
|
PlasmaTherm PT70 PECVD chamber |
Kupcho | Deposition of SiN or SiO2 onto hot substrates, by plasma-enhanced chemical vapor deposition Operating Procedure Reference Results |
Indium Evaporator | Gilles | Deposition of indium by thermal evaporation onto substrates in vacuum Procedure Reference |
|
| Process key: | MOS Silicon | Polymers | Compound Semi | MEMS |
| DRY ETCH | ||||||
|---|---|---|---|---|---|---|
| TOOL | STAFF CONTACT | CAPABILITIES & RESOURCES | M O S |
P O L Y |
S E M I |
M E M S |
|
STS Mulitplex Deep Silicon RIE |
Kupcho | Reactive ion etcher. Plasma is inductively coupled, low density, and low pressure. Ion energies are low. Tool can alternate cycles of etching and passivation. Result is good anisotropy in very deep (25o microns or greater) Si etch trenches. Schedule time on the STS Procedure Etch Gases Available Reference |
||||
| Unaxis 790 RIE | Kupcho | Selective removal of materil by reactive ion etching. Photoresist is allowed as a mask in this tool. Procedure Etch Gases Available Reference Training Video |
||||
|
PlasmaTherm PT70 Reactive-Ion Etcher |
Kupcho | Selective removal of material by RF plasma. Procedure Etch Gases Available Web resource Reference Results |
||||
|
PlasmaTherm 770 ECR III-V Semiconductor Etcher |
Kupcho | Selective removal of material by electron cyclotron resonance (ECR) enhanced plasma RIE. Primarily intended for etching semiconductor materials. Procedure Etch Gases Available Reference Training Video |
||||
|
PlasmaTherm 770 ICP Metal Etcher |
Kupcho | Selective removal of material by inductively-coupled plasma (ICP) RIE. Primarily intended for etching metals. Procedure Etch Gases Available Reference Training Video |
||||
|
Samco UV-Ozone Stripper/Cleaner |
Leonard | Cleans and strips organic material from wafers, and modifies surface energy, in preparation for later processing steps Procedure Etch Gases Available Reference X |
||||
|
YES O2/Ar Plasma Asher & Stripper (tool is currently offline) |
Leonard | Etch Gases Available Reference | ||||
|
Trion Phantom III high-density plasma RIE |
Leonard | High density inductively-coupled plasma RIE. Accepts 100 mm wafers on electrostatic chuck. Procedure Etch Gases Available Reference |
||||
| Process key: | MOS Silicon | Polymers | Compound Semi | MEMS |
| MICROMACHINING | ||||||
|---|---|---|---|---|---|---|
| TOOL | STAFF CONTACT | CAPABILITIES & RESOURCES | M O S |
P O L Y |
S E M I |
M E M S |
|
Blue M Programmable Polymer Oven |
Kupcho | Convection oven with nitrogen flow. Programmable temperature profiles. Temp to 425 C. Procedure |
||||
|
Cooke Anneal Oven |
Kupcho | Nitrogen/vacuum polyimide film anneal. Temp to 300 C. Procedure |
||||
|
Tousimis Automegasamdri 915B Critical Point Dryer |
Leonard | Dries samples without surface tension distortions, by replacing liquid on sample with liquid CO2, then passing through CO2's supercritical region to change it from liquid to gas without crossing a phase boundary. Procedure |
||||
|
EV 801 Wafer Bonder |
Gilles | Wafer-to-wafer anodid bonding for MEMS fabrication. 2", 3", or 4" wafers. Temp to 550 C; force to 7,000 N; voltage to 1,200 V. Includes cleaning station. Procedure |
||||
|
EV 620 Aligner for EV 801 Bonder |
Gilles | Back side alignment system for EV 801 bonder. Resolution to 2 microns. Procedure |
||||
| Process key: | MOS Silicon | Polymers | Compound Semi | MEMS |
| LITHOGRAPHY | ||||||
|---|---|---|---|---|---|---|
| TOOL |
STAFF CONTACT | CAPABILITIES & RESOURCES | M O S |
P O L Y |
S E M I |
M E M S |
|
Lithography Reference Material |
||||||
| Nikon Body 8 I-line Stepper | Milicic | |
||||
|
Canon PLA-501 Contact Aligner, 3" wafers; Teaching Tool |
Milicic | Mask aligner & UV exposure tool. Automated handling of 3" wafers. Manual alignment. 4" masks. Used by UW microfabrication classes. Procedure |
||||
|
Karl Suss MA6/BA6 Contact Aligner / IR Back Side Aligner |
Leonard | Manually-operated mask aligner and exposure tool. Substrates: 3", 4", or 6" wafers; pieces of wafers possible. Masks: 4", 5", or 7". Alignment to top or bottom face of substrate. Exposure modes: Proximity; soft, hard, or vacuum contact. 350 W UV source. Submicron resolution possible. Procedure Training video |
||||
|
Karl Suss Old MJB3 Contact Aligner |
Leonard | Manual mask aligner and exposure tool. Procedure |
||||
|
Karl Suss New MJB3 Contact Aligner / IR Back Side Aligner |
Leonard | Manual mask aligner and exposure tool.) Procedure |
||||
|
Obducat AB NIL Nanoimprinter |
Leonard | Manually loaded imprint tool. Heat and pressure programmable to 250 C, 1000 PSI. Substrates up to 65 mm diameter. No alignment. Possible 10 nm resolution. Procedure |
||||
| Solitec VBS200 HMDS Prime Oven | Leonard | |||||
|
Headway Programmable Photoresist Spinners #1 and #3 - General Use |
Leonard | Chemical benches with wafer spinners and vacuum hotplates, for coating and baking substrates with non-epoxy photoresists (e.g., SC1827). Preprogrammed spin speed recipes. Procedure |
||||
|
Headway Programmable Photoresist Spinner #2 - SU8 |
Leonard | Chemical bench with wafer spinner and vacuum hotplate, dedicated for coating and baking substrates epoxy photoresists such as SU8. Preprogrammed spin speed recipes. Procedure |
||||
| HTG UV Flood Exposure Bed | Leonard | UV light table for flood exposure of samples. Operating procedure is posted at the tool. |
||||
|
Solvent Bench |
Leonard | General-use flow hood for solvents. Includes heated PR stripping tanks for cleaning wafers and masks. Do liftoff here. Procedure |
||||
|
SU8 Solvent Bench |
Leonard | Flow hood for SU8 photoresist processing. Includes two programmable hotplates. Procedure Hotplate Programming |
||||
| Spin-Rinse Dryer | Leonard | Touchless drying of 4" wafers |
||||
| Lithography Ovens | Ovens for baking many lithography wafers at once. |
|||||
| Process key: | MOS Silicon | Polymers | Compound Semi | MEMS |
| TEACHING LAB | ||||||
|---|---|---|---|---|---|---|
| TOOL | STAFF CONTACT | CAPABILITIES & RESOURCES | M O S |
P O L Y |
S E M I |
M E M S |
|
Canon PLA-501 Contact Aligner; Teaching Tool |
Milicic | Mask aligner & UV exposure tool. Automated handling of 3" wafers. Manual alignment. 4" masks. Used by UW microfabrication classes. Procedure |
||||
|
Corrosives Bench Chemical bench for teaching |
Milicic | Flow hood for handling corrosive substances, including acids and bases. No solvents are permitted at this bench. Two hotplates, three DI sinks, DI sprayer, N2 blowoff guns, and solution aspirator. Procedure |
||||
|
Solvent Bench Chemical bench for teaching |
Milicic | Flow hood for handling solvents, including acetone and alcohol. No corrosives are permitted at this bench. Two hotplates, DI sink, DI sprayer, and N2 blowoff gun. Users may request permission to heat solvents at this bench. Procedure |
||||
|
Spin Coat Bench Photoresist spincoater for teaching |
Milicic | Chemical bench with hotplate and manually-controlled wafer spinner. Procedure |
||||
|
Black Max Oxidation Wet/Dry Oxidation Furnace for teaching |
Milicic | Furnace tube with microprocessor-controlled temperature profiles and gas flows. Recipes available for wet or dry oxidation, nitrogen anneal. Wafer diameter to 4". Procedure |
||||
|
Black Max Annealer Forming Gas Metal Anneal Furnace |
Milicic | Furnace tube with microprocessor-controlled temperature profiles and gas flows. Recipes available for nitrogen or forming gass anneal. Wafer diameter to 4". Some metals are permitted in this furnace. Procedure |
||||
| Spin-Rinse Dryer | Touchless drying of 4" wafers |
|||||
| Process key: | MOS Silicon | Polymers | Compound Semi | MEMS |
| THERMAL PROCESSING | ||||||
|---|---|---|---|---|---|---|
| TOOL | STAFF CONTACT | CAPABILITIES & RESOURCES | M O S |
P O L Y |
S E M I |
M E M S |
|
Black Max Anneal Thermal Anneal Furnace for Metals ("Aluminum Anneal Tube") |
Milicic | Furnace tube with microprocessor-controlled temperature profiles and gas flows. Recipes available for nitrogen or forming gass anneal. Wafer diameter to 4". Some metals are permitted in this furnace. Procedure |
||||
|
Black Max Oxidation Wet/Dry Oxidation Furnace for teaching |
Milicic | Furnace tube with microprocessor-controlled temperature profiles and gas flows. Recipes available for wet or dry oxidation, nitrogen anneal. Wafer diameter to 4". Procedure |
||||
|
Heatpulse 610
RTA Rapid Thermal Annealer |
Gilles | Programmable heating rates of 1 to 200 C per second, up to 800 C, for 4" samples in nitrogen or forming gas. Procedure Training video |
||||
|
TYSTAR LTO Low-Temperature Oxide Furnace |
Gilles | Dry-oxide LPCVD at 450 C in O2 and SiH4; PH3 may be added as dopant. Procedure |
||||
|
TYSTAR Poly Polysilicon LPCVD Furnace |
Gilles | Polysilicon LPCVD in SiH4; PH3 may be added as dopant. Procedure |
||||
|
TYSTAR Nitride Silicon Nitride LPCVD Furnace |
Gilles | SiNx LPCVD in dichlorosilane (H2SiCl2) and ammonia (NH3). Procedure |
||||
|
TYSTAR Oxide Wet/Dry Oxidation Furnace |
Gilles | Wet or dry oxidation, or annealing, at a range of temperatures. Procedure |
||||
|
MRL High Temperature Anneal Furnace Tube 1 |
Gilles | Annealling in forming gas or nitrogen, 600 to 1050 C.) Procedure |
||||
|
MRL Oxidation General-Use Steam Oxidation Furnace Tube 2 |
Gilles | Wet or dry oxidation, 600 to 1050 C. Also annealing. Procedure |
||||
|
MRL Compound Semi Oxidation Furnace Tube 3 |
Gilles | Wet or dry oxidation, 380 to 500 C. Also annealing. Reserved for compound semiconductors. Procedure |
||||
|
MRL Low-Temperature Anneal Furnace Tube 4 |
Gilles | Annealing at 380 to 500 C, in nitrogen or forming gas. Procedure |
||||
|
MRL high-Temperature Anneal Furnace Tube 6 |
Gilles | Annealing at 600 to 1200 C, in nitrogen or forming gas. Procedure |
||||
|
Blue M Programmable Polymer Oven |
Kupcho | Convection oven with nitrogen flow. Programmable temperature profiles. Temp to 425 C. Procedure |
||||
|
Cooke Anneal Oven |
Kupcho | Nitrogen/vacuum polyimide film anneal. Temp to 300 C. Procedure |
||||
| Prefurnace Clean | Gilles | Flow hood and chemical bench for preparing substrates before thermal processing, for example in the LPCVD or oxidation furnaces. Four process tanks: Piranha bath; ammonia / hydrogen peroxide; hydrofluoric acid / hydrogen peroxide; and hydrofluoric acid. Sample holders for 3", 4", and 6" wafers, and pieces/parts. Quick-dump DI rinse (QDR) tanks to rinse samples between process tanks. Two process tanks and one QDR have megasonics. Glove rinse and bottle washer. Spin-rinse dryer (SRD). Procedure Training video |
||||
| Spin-Rinse Dryer | Touchless drying of 3" or 4" wafers, after prefurnace clean |
|||||
| Process key: | MOS Silicon | Polymers | Compound Semi | MEMS |
| WET CHEMISTRY | ||||||
|---|---|---|---|---|---|---|
| TOOL | STAFF CONTACT | CAPABILITIES & RESOURCES | M O S |
P O L Y |
S E M I |
M E M S |
|
Aluminum Etchant Chemical Bench ("DAE Bench") |
Leonard | Wet aluminum etch at 40 C, in commercial Defreckling Aluminum Etchant (DAE) solution. Bench also has a quick-dump rinser (QDR), hotplate, and sink. Wafer and piece holders provided. Procedure |
Reference
||||
|
BOE Etch Bench Buffered Oxide Etch Chemical Bench |
Leonard | Process tanks with filtered 6:1 and 15:1 BOE solutions; cascade rinse tank; sink; wafer and piece holders. Procedure |
||||
| III-V Semiconductor Chemical Bench | Leonard | Acid and base chemical processing, in beakers in hotplate wells. Two hotplates; two sinks; deionized water sprayer; solution aspirator; timers. Procedure |
||||
| KOH/TMAH Silicon Wet Etch Bench | Leonard | Separate tanks for etching Si in hot KOH or TMAH at 80 C; cascade rinser; control timer. Procedure Reference |
||||
|
Nitride Wet Strip Chemical Bench |
Leonard | Phosphoric acid process tank at 170 C for stripping silicon nitride; quick-dump rinser (QDR); wafer and piece holder. Procedure |
||||
| Piranha Bench | Leonard | Heathed process tank for removing organic material from substrates in Piranha (sulfuric acid and hydrogen peroxide0 solution; quick-dump rinser (QDR); hotplate; sink; timer. Procedure |
||||
| Solvent Benches | Leonard | Two hotplates; ultrasonic tank; quick-dump rinser (QDR); sink; timers. This is a good place to do liftoff. Procedure |
||||
| Non-Litho Spinner | Leonard | Substrate spinner with manual speed and time controls. For applications other than lithography. Procedure |
||||
| Spin-Rinse Dryer (SRD) | Touchless rinsing and drying of 3" and 4" wafers. Procedure |
|||||
Most browsers can open the PDF files on this page, but if you need a free PDF viewer, please visit the Adobe Reader webpage. Please contact us for a printout or alternative format.
|
|
Copyright 2011 The Board of Regents of the University of Wisconsin System Date last modified: 21-Dec-2011 Date created: 03-Feb-2003 Content by: Quinn Leonard Accessibility Web services |