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Operating procedures are available.
Process Description:
Low pressure chemical vapor deposition (PECVD) is performed
in a vacuum environment at higher substrate temperatures
such as 600 - 820°C. This process is based on the chemical
reaction of gaseous compounds to form a thin film
deposition. Thermal energy source is the primary driving
force for the reaction while the lower pressures reduces gas
phase nucleation. Together these system parameters achieve
reasonable deposition uniformity and allow control of the
deposition kinetics.
System Description:
The LPCVD polysilicon system is located in the bottom right-
hand tube of the Thermco furnace. The system uses a Tymkon
microprocessor sequencer to automatically control all vacuum
valves, gas flow, and pressure control. The tube temperature
is manually adjusted on the temperature controls located on
the side of the system. Wafers are loaded and pushed into
the tube manually.
Gases:
PDF version of this page.
Date last modified: 27-Jul-2012
Date created: 25-Jul-2001
Content: dan@engr.wisc.edu
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